Ion Beam Effect on the Structural and Optical Properties of AlN:Er

Erbium (Er)-doped Aluminum Nitride (AlN) thin films were deposited and fabricated on Si (100) (111) substrates in a Nitrogen atmosphere using the plasma magnetron sputtering technique. The thermally annealed at 900 °C Argon (Ar) atmosphere. samples irradiated with protons dose of 1 × 1014 ions/cm2 which carried an incident energy 335 keV, tandem pelletron accelerator. Rutherford backscattering spectroscopy (RBS) X-ray diffraction (XRD) used for stoichiometric structural analysis films, while Fourier transforms infrared (FTIR) was performed to track changes optical characteristics before after ions’ irradiation implantation. has affected properties could be exploited use AlN:Er various optoelectronic solid-state device applications.